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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4304 DESCRIPTION With TO-220F package High voltage High speed switching APPLICATIONS For switching regulator and general purpose applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER CHA IN Collector current Base current Collector dissipation Collector-base voltage Collector-emitter voltage E SEM NG Open base Open emitter OND IC CONDITIONS TOR UC VALUE 900 800 7 3 6 1.5 UNIT V V V A A A W ae ae Emitter-base voltage Open collector Collector current-peak TC=25ae 35 150 -55~150 Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=10mA ; IB=0 IC=0.7A ;IB=0.14A IC=0.7A ;IB=0.14A VCB=800V; IE=0 VEB=7V; IC=0 IC=0.7A ; VCE=4V IE=0; VCB=10V;f=1MHz IE=-0.3A ; VCE=12V 10 50 MIN 800 TYP. 2SC4304 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE COB fT MAX UNIT V 0.5 1.2 100 100 30 |I |I V V A A pF MHz Switching times ton ts tf Fall time Turn-on time Storage time CHA IN E SEM NG IC=0.7A; IB1=0.1A IB2=-0.35A VCC=250V ,RL=357| OND IC TOR UC 15 0.7 4.0 0.7 |I |I |I s s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4304 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4304 CHA IN E SEM NG OND IC TOR UC 4 |
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